2N5551

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector current (Ic) 600 mA

Collector breakthrough voltage (Vceo) 160 V

Power 625 MW

Value of attribute parameter

Characteristic frequency (ft) 100 MHz

Collector Disconnection Current (Icbo) 50 per

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 200 mV at 50 mA, 5 mA

Operating Temperature -