FD965S

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 5A

Collector breakdown voltage (VCEO) 20V

Power 750 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic , Vce) 1000@500 MA，2V

Rated frequency (feet) 150 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1V@0.1A , 3A

Working temperature -55 ℃~150 ℃.