BCX56-16
Value of attribute parameter
Product Catalog Transistor (BJT)
Transistor type NPN
Collector Current (Ic) 1A
Collector breakthrough voltage (Vceo) 80 V
Power 500 MW
Value of attribute parameter
DC gain factor ( hFE@Ic , Vce) 250 at 150 mA, 2 V
Characteristic frequency (ft) 130 MHz
Collector Disconnection Current (Icbo) 100 per
Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV@500 mA, 50 mA
Operating Temperature -55℃~+150℃
Product Catalog Transistor (BJT)
Transistor type NPN
Collector Current (Ic) 1A
Collector breakthrough voltage (Vceo) 80 V
Power 500 MW
Value of attribute parameter
DC gain factor ( hFE@Ic , Vce) 250 at 150 mA, 2 V
Characteristic frequency (ft) 130 MHz
Collector Disconnection Current (Icbo) 100 per
Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV@500 mA, 50 mA
Operating Temperature -55℃~+150℃