bipolar transistor (BJT)

BCX56-16

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector Current (Ic) 1A

Collector breakthrough voltage (Vceo) 80 V

Power 500 MW

Value of attribute parameter

DC gain factor ( hFE@Ic , Vce) 250 at 150 mA, 2 V

Characteristic frequency (ft) 130 MHz

Collector Disconnection Current (Icbo) 100 per

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV@500 mA, 50 mA

Operating Temperature -55℃~+150℃



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