CXT5551

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 600 mA

Collector breakdown voltage (VCEO) 160 V

Power 500 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic ，VCE）300，10mA，5V

Characteristic frequency (feet) 100 MHz

Collector Disconnect Current (ICBO) 50V

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 200 mV, 50 mA, 5 mA

Working temperature -55 ℃~150 ℃.