S9014
Attribute parameter values
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 100 mA
Collector breakdown voltage (VCEO) 45 V
Power of 200 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 1000 at 1mA, 5V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 300mV, 100mA, 5mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 100 mA
Collector breakdown voltage (VCEO) 45 V
Power of 200 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 1000 at 1mA, 5V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 300mV, 100mA, 5mA
Working temperature -55 ℃~150 ℃.