BC857BDW

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 200 mA

Collector breakdown voltage (VCEO) 45 V

Power 300 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic ，VCE）400，2 mA，5 V

Rated frequency (feet) 200 MHz

Collector Disconnect Current (ICBO) 15NA

Collector emitter electrode (VCE (SAT) @ IC, IB) 650mV, 100mA, 5mA

Working temperature -55 ℃~150 ℃.