bipolar transistor (BJT)

MMBTA05

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 500 mA

Collector breakdown voltage (VCEO) 60 V

Power 300 MW

Attribute parameter values

DC gain coefficient( hFE@Ic ,VCE)400,10mA,1V

Characteristic frequency (feet) 100 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 250 mV, 100 mA, 10 mA

Working temperature -55 ℃~150 ℃.



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