BC807-40W

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 500 mA

Collector breakdown voltage (VCEO) 45 V

Power of 200 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic ，VCE）600，100 mA，1 V

Characteristic frequency (feet) 80 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.2V@500mA , 50mA

Working temperature -55 ℃~150 ℃.