bipolar transistor (BJT)

FS13001

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector current (Ic) 200 mA

Collector breakthrough voltage (Vceo) 420 V

Power 750 MW

Value of attribute parameter

DC gain factor ( hFE@Ic , Vce) 14 at 20 mA, 20 V

Characteristic frequency (ft) 8 MHz

Collector Disconnection Current (Icbo) 100uA

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV at 50 mA, 10 mA

Operating Temperature -



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