FS13001
Value of attribute parameter
Product Catalog Transistor (BJT)
Transistor type NPN
Collector current (Ic) 200 mA
Collector breakthrough voltage (Vceo) 420 V
Power 750 MW
Value of attribute parameter
DC gain factor ( hFE@Ic , Vce) 14 at 20 mA, 20 V
Characteristic frequency (ft) 8 MHz
Collector Disconnection Current (Icbo) 100uA
Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV at 50 mA, 10 mA
Operating Temperature -
Product Catalog Transistor (BJT)
Transistor type NPN
Collector current (Ic) 200 mA
Collector breakthrough voltage (Vceo) 420 V
Power 750 MW
Value of attribute parameter
DC gain factor ( hFE@Ic , Vce) 14 at 20 mA, 20 V
Characteristic frequency (ft) 8 MHz
Collector Disconnection Current (Icbo) 100uA
Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV at 50 mA, 10 mA
Operating Temperature -