S9012-TA
Attribute parameter values
Transistor Product Catalog (BJT)
Transistor type PNP
Collector current (IC) 500 mA
Collector breakdown voltage (VCEO) 25V
Power 625 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 400 at 50 mA, 1 V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) at 50mA 600 mV, 5mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
Transistor type PNP
Collector current (IC) 500 mA
Collector breakdown voltage (VCEO) 25V
Power 625 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 400 at 50 mA, 1 V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) at 50mA 600 mV, 5mA
Working temperature -55 ℃~150 ℃.