BC847S

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector current (Ic) 100 mA

Collector breakthrough voltage (Vceo) 45 V

Power 200 MW

Value of attribute parameter

DC gain factor ( hFE@Ic , Vce) 450 at 2 mA, 5 V

Characteristic frequency (ft) 200 MHz

Collector Disconnection Current (Icbo) 15nA

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 650 mV at 100 mA, 5 mA

Operating Temperature -55℃~+150℃