B772-Y

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 3A

Collector breakdown voltage (VCEO) 30 V

Power 500 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic VCE 400 at 1A, 2V

Characteristic frequency (feet) 50 MHz

Collector Disconnect Current (ICBO) 1UA

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 500 mV, 2 A, 0.2 A

Working temperature -55 ℃~150 ℃.