bipolar transistor (BJT)

MMBTA42

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 300 mA

Collector breakdown voltage (VCEO) 300 V

Power 350 MW

Attribute parameter values

DC gain coefficient( hFE@Ic ,VCE)100,10mA,10V

Characteristic frequency (feet) 50 MHz

Collector disconnect current (ICBO) 250N

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 200 mV, 20mA, 2mA

Working temperature -55 ℃~150 ℃ (TJ)



Домой

телефон

адрес

到底了~