MMBTA42
Attribute parameter values
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 300 mA
Collector breakdown voltage (VCEO) 300 V
Power 350 MW
Attribute parameter values
DC gain coefficient( hFE@Ic ,VCE)100,10mA,10V
Characteristic frequency (feet) 50 MHz
Collector disconnect current (ICBO) 250N
Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 200 mV, 20mA, 2mA
Working temperature -55 ℃~150 ℃ (TJ)
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 300 mA
Collector breakdown voltage (VCEO) 300 V
Power 350 MW
Attribute parameter values
DC gain coefficient( hFE@Ic ,VCE)100,10mA,10V
Characteristic frequency (feet) 50 MHz
Collector disconnect current (ICBO) 250N
Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 200 mV, 20mA, 2mA
Working temperature -55 ℃~150 ℃ (TJ)