S9013
Attribute parameter values
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 500 mA
Collector breakdown voltage (VCEO) 25V
Power 300 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 400 at 50 mA, 1 V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 600 mV, 500 mA, 50 mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 500 mA
Collector breakdown voltage (VCEO) 25V
Power 300 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 400 at 50 mA, 1 V
Rated frequency (feet) 150 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 600 mV, 500 mA, 50 mA
Working temperature -55 ℃~150 ℃.