2SA1013-Y

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 1A

Collector breakdown voltage (VCEO) 160 V

Power 500 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic 320 VCE at 200 mA, 5 V

Characteristic frequency (feet) 15 MHz

Collector Disconnect Current (ICBO) 1UA

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.5V@500mA , 50mA

Working temperature -55 ℃~150 ℃.