bipolar transistor (BJT)

FMMT493

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 1A

Collector breakdown voltage (VCEO) 100 V

Power of 250 MW

Attribute parameter values

DC gain coefficient( hFE@Ic , Vce) 100@250 MA,10 V

Rated frequency (feet) 150 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 600 mV, 1A, 100mA

Working temperature -55 ℃~150 ℃.



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