bipolar transistor (BJT)

SS8550

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 1.5A

Collector breakdown voltage (VCEO) 25V

Power 300 MW

Attribute parameter values

Characteristic frequency (feet) 100 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 500 mV @ 800 mA, 80 mA

Working temperature-



Домой

телефон

адрес

到底了~