bipolar transistor (BJT)

MMBT4401

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 600 mA

Collector breakdown voltage (VCEO) 40 V

Power 300 MW

Attribute parameter values

DC gain coefficient( hFE@Ic 300 VCE at 150 mA, 1 V

Rated frequency (feet) 250 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 750 mV, 500 mA, 50 mA

Working temperature -55 ℃~150 ℃.



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