bipolar transistor (BJT)

BC847BS

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 100 mA

Collector breakdown voltage (VCEO) 45 V

Power 300 MW

Attribute parameter values

DC gain coefficient( hFE@Ic ,VCE)200,2 mA,5 V

Rated frequency (feet) 200 MHz

Collector Disconnect Current (ICBO) 15NA

Collector emitter electrode (VCE (SAT) @ IC, IB) 650mV, 100mA, 5mA

Working temperature -55 ℃~150 ℃.
Подробная информация

BC847BS.PDF




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