bipolar transistor (BJT)

S9012

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 500 mA

Collector breakdown voltage (VCEO) 25V

Power 300 MW

Attribute parameter values

DC gain coefficient( hFE@Ic VCE 400 at 50 mA, 1 V

Rated frequency (feet) 150 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 600 mV, 500 mA, 50 mA

Working temperature -55 ℃~150 ℃.



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