MMBT2907A

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 600 mA

Collector breakdown voltage (VCEO) 60 V

Power 300 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic VCE 300 at 150 mA, 10 V

Rated frequency (feet) 200 MHz

Collector Disconnect Current (ICBO) 20NA

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.6V@500mA , 50mA

Working temperature -55 ℃~150 ℃.