bipolar transistor (BJT)

S9015

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 100 mA

Collector breakdown voltage (VCEO) 45 V

Power of 200 MW

Attribute parameter values

Rated frequency (feet) 150 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 300mV, 100mA, 10mA

Working temperature -55 ℃~150 ℃ (TJ)
Подробная информация

S9015.PDF




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