bipolar transistor (BJT)

MMBTA92

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 200 mA

Collector breakdown voltage (VCEO) 300 V

Power 300 MW

Attribute parameter values

DC gain coefficient( hFE@Ic ,VCE)100,10mA,10V

Characteristic frequency (feet) 50 MHz

Collector disconnect current (ICBO) 250N

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 200 mV, 20mA, 2mA

Working temperature-



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