MMBT4403
Attribute parameter values
Transistor Product Catalog (BJT)
Transistor type PNP
Collector current (IC) 600 mA
Collector breakdown voltage (VCEO) 40 V
Power 300 MW
Attribute parameter values
DC gain coefficient( hFE@Ic 300 VCE at 150 mA, 2 V
Rated frequency (feet) 200 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 750 mV, 500 mA, 50 mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
Transistor type PNP
Collector current (IC) 600 mA
Collector breakdown voltage (VCEO) 40 V
Power 300 MW
Attribute parameter values
DC gain coefficient( hFE@Ic 300 VCE at 150 mA, 2 V
Rated frequency (feet) 200 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 750 mV, 500 mA, 50 mA
Working temperature -55 ℃~150 ℃.