MMBTA13
Attribute parameter values
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 1A
Collector breakdown voltage (VCEO) 30 V
Power 625 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 20000 at 100mAh, 5V
Characteristic frequency (feet) 125 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.5V@100mA ,0.1 mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 1A
Collector breakdown voltage (VCEO) 30 V
Power 625 MW
Attribute parameter values
DC gain coefficient( hFE@Ic VCE 20000 at 100mAh, 5V
Characteristic frequency (feet) 125 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.5V@100mA ,0.1 mA
Working temperature -55 ℃~150 ℃.