bipolar transistor (BJT)

MMBTA13

Attribute parameter values

Transistor Product Catalog (BJT)

NPN transistor type

Collector current (IC) 1A

Collector breakdown voltage (VCEO) 30 V

Power 625 MW

Attribute parameter values

DC gain coefficient( hFE@Ic VCE 20000 at 100mAh, 5V

Characteristic frequency (feet) 125 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter saturation voltage (VCE (SAT) @ IC, IB) 1.5V@100mA ,0.1 mA

Working temperature -55 ℃~150 ℃.



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