MMBT5401

Attribute parameter values

Transistor Product Catalog (BJT)

Transistor type PNP

Collector current (IC) 600 mA

Collector breakdown voltage (VCEO) 150 V

Power 300 MW

Attribute parameter values

DC gain coefficient（ hFE@Ic ，VCE）300，10mA，5V

Characteristic frequency (feet) 100 MHz

Collector Disconnect Current (ICBO) 100 V

Collector emitter (VCE (SAT) @ IC, IB) 500mV, 50mA, 5mA

Working temperature -55 ℃~150 ℃.