BC847C
Attribute parameter values
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 100 mA
Collector breakdown voltage (VCEO) 45 V
Power of 200 MW
Attribute parameter values
DC gain coefficient( hFE@Ic ,VCE)800,2 mA,5 V
Characteristic frequency (feet) 100 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 500mV, 100mA, 5mA
Working temperature -55 ℃~150 ℃.
Transistor Product Catalog (BJT)
NPN transistor type
Collector current (IC) 100 mA
Collector breakdown voltage (VCEO) 45 V
Power of 200 MW
Attribute parameter values
DC gain coefficient( hFE@Ic ,VCE)800,2 mA,5 V
Characteristic frequency (feet) 100 MHz
Collector Disconnect Current (ICBO) 100 V
Collector emitter (VCE (SAT) @ IC, IB) 500mV, 100mA, 5mA
Working temperature -55 ℃~150 ℃.