MMBT2222A

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector current (Ic) 600 mA

Collector breakthrough voltage (Vceo) 40 V

Power 300 MW

Value of attribute parameter

DC gain factor ( hFE@Ic , Vce) 300 at 150 mA, 10 V

Characteristic frequency (ft) 300 MHz

Collector Disconnection Current (Icbo) 10nA

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 1 V at 500 mA, 50 mA

Operating Temperature -55℃~+150℃