2SD882

Value of attribute parameter

Product Catalog Transistor (BJT)

Transistor type NPN

Collector Current (Ic) 3A

Collector breakthrough voltage (Vceo) 30 V

Power 500 MW

Value of attribute parameter

Characteristic frequency (ft) 50 MHz

Collector Disconnection Current (Icbo) 1uA

Emitter manifold saturation voltage (VCE(sat)@Ic, Ib) 500 mV at 2 A, 200 mA

Operating Temperature -55℃~+150℃@(Tj)