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2P4M-89-3L
Product Catalog: Controllable Silicon (SCR)/Modules SCR type unidirectional SCR Shutter voltage (VGT) 800 mV Maintain current (IH) at 4 mA Peak disconnect voltage (VDRM) 600 V Shutter current (IGT) 200UA Attribute parameter values Turn on peak voltage (VTM) 1.55V Starting current( Itsm@f (20A at 50 Hz) Average Scattering Shutter Power (PG (AV)) 100 MW Root mean square current (IT (RMS)) 2A Working temperature -40 ℃~125 ℃.
2024-12-30
23
MCR100-8W
Product Catalog: Controllable Silicon (SCR)/Modules SCR type unidirectional SCR Shutter voltage (VGT) 800 mV Maintain current (IH) at 4 mA Peak disconnect voltage (VDRM) 800 V Shutter current (IGT) 100UA Attribute parameter values Turn on peak voltage (VTM) 1.7V Starting current( Itsm@f 12A at 50 Hz Average Scattering Shutter Power (PG (AV)) 100 MW Root Mean Square Current (IT (RMS)) 1A when turned on Working temperature -40 ℃~125 ℃.
2024-12-30
23
BT169D
Product Catalog: Controllable Silicon (SCR)/Modules SCR type unidirectional SCR Shutter voltage (VGT) 800 mV Maintain current (IH) at 4 mA Peak disconnect voltage (VDRM) 600 V Shutter current (IGT) 200UA Attribute parameter values Turn on peak voltage (VTM) 1.5 V Starting current( Itsm@f )At 8a, 50 Hz Average Scattering Shutter Power (PG (AV)) 100 MW Root mean square current (IT (RMS)) at startup 800 mA Working temperature -40 ℃~125 ℃.
2024-12-30
23
BT151D
Product Catalog: Controllable Silicon (SCR)/Modules SCR type unidirectional SCR Shutter voltage (VGT) 1.3V Maintain current (IH) at 40 mA Peak disconnect voltage (VDRM) 600 V Shutter current (IGT) 10mA Attribute parameter values Turn on peak voltage (VTM) 1.55V Starting current( Itsm@f )95a at 50Hz Average scattering shutter power (PG (AV)) 1 W Standard turn-on current (IT (RMS)) 12A Working temperature -40 ℃~125 ℃.
2024-12-30
23
BZT52C3V9
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 3.9V Reverse current (IR) 3ua, 1V Attribute parameter values Voltage regulation value (range) 3.7V~4.1V Power (PD) 500 MW Total resistance (ZZT) 90 ohms
2024-12-30
23
MMSZ5242B
Independent configuration of diodes Voltage regulation value (rated value) 12V Reverse current (IR) 1uA@9.1V Attribute parameter values Voltage regulation value (range) 11.4V~12.6V Power (PD) 500 MW Total resistance (ZZT) 30 ohms
2024-12-30
23
BZT52C15
Independent configuration of diodes Voltage regulation value (rated value) 15V Reverse current (IR) 100nA@10.5V Attribute parameter values Voltage regulation value (range) 13.8V~15.8V Power (PD) 500 MW Total resistance (ZZT) 30 ohms
2024-12-30
23
BZT52C6V2
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 6.2V Reverse current (IR) 3ua (4V) Attribute parameter values Voltage regulation value (range) 5.8V~6.6V Power (PD) 500 MW Total resistance (ZZT) 10 ohms
2024-12-30
23
BZT52C6V8
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 6.8V Reverse current (IR) 2ua, 4V Attribute parameter values Voltage regulation value (range) 6.4V~7.2V Power (PD) 500 MW Total resistance (ZZT) 15 ohms
2024-12-30
23
BZT52C3V3S
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 3.3V Return current (IR) 5ua, 1V Attribute parameter values Voltage regulation value (range) 3.1V~3.5V Power (PD) 200 MW Total resistance (ZZT) 95 ohms
2024-12-30
23
SML4739A
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 9.1V Reverse current (IR) 10UA at 7V Attribute parameter values Voltage regulation value (range) 8.65V~9.56V Power (PD) 1 W Total resistance (ZZT) 5 ohms
2024-12-30
23
BZT52C12
Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 12V Reverse current (IR) at 8V 100NA Attribute parameter values Voltage regulation value (range) 11.4V~12.7V Power (PD) 500 MW Total resistance (ZZT) 25 ohms
2024-12-30
23
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