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About us
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product
thyristor
The diode
bipolar transistor (BJT)
semiconductor Oxide Field effect Transistor (MOSFET)
Double Polar Conductor Insulated Fan Module (IGBT)
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Bridge rectifier
Linear Low Voltage Drop Stabilizer (LDO)
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S10MC
2024-12-30
16
M7F
Independent diode configuration Direct voltage drop (Vf) 1.1V@1A DC reverse withstanding voltage (Vr) 1 kV Straightener current 1A Reverse current (Ir) 5uA at 1 kV
2024-12-30
16
1N4007WS
Independent configuration of diodes Direct voltage drop (VF) 1.1V@1A Reverse DC withstand voltage (VR) 1kV Rectifier 1A current Reverse current (IR) 5ua at 1000 V
2024-12-30
16
S3MB
2024-12-30
16
S8NC
2024-12-30
16
SOD4007
Direct voltage drop (VF) 1.1V@1A Reverse DC withstand voltage (VR) 1kV Rectifier 1A current Reverse current (IR) at 1kV 5ua
2024-12-30
16
S2MA
2024-12-30
16
M7A
Direct voltage drop (VF) 1.1V@1A Reverse DC withstand voltage (VR) 1kV Rectifier 1A current Reverse current (IR) at 1kV 5ua
2024-12-30
16
DL4007
Direct voltage drop (VF) 1.1V@1A Reverse DC withstand voltage (VR) 1kV Rectifier 1A current Reverse current (IR) 5ua at 1000 V
2024-12-30
16
MMSZ5231B
Independent configuration of diodes Voltage regulation value (rated value) 5.1V Reverse current (IR) at 2V 5ua Voltage regulation value (range) 4.85V~5.36V Power (PD) 500 MW Total resistance (ZZT) 17 ohms
2024-12-30
23
MMBZ33VALT1G
Common anode to diode configuration Voltage regulation value (rated value) 33V Reverse current (IR) 100nA@23.1V Voltage regulation value (range) 31V~35V Power (PD) 300 MW Total resistance (ZZT) 80 ohms
2024-12-30
23
1N4746A
Diode configuration- Voltage regulation value (rated value) 18V Reverse current (IR) 5uA@13.7V Voltage regulation value (range) 17.1V~18.9V Power (PD) 1 W Total resistance (ZZT) 20 ohms
2024-12-30
23
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