BZT52B12S

Independent configuration of diodes Voltage regulation value (rated value) 12V Reverse current (IR) at 9 V 100N Voltage regulation value (range) 11.76V~12.24V Power (PD) 200 MW Total resistance (ZZT) 35 ohms
2024-12-30 23

BZT52C16S

Independent configuration of diodes Voltage regulation value (rated value) 16 V Reverse current (IR) 100nA@11.2V Voltage regulation value (range) 15.3V~17.1V Power (PD) 200 MW Total resistance (ZZT) 40 ohms
2024-12-30 24

BZT52B6V2

Independent configuration of diodes Voltage regulation value (rated value) 6.2V Reverse current (IR) at 3V 1ua Attribute parameter values Voltage regulation value (range) 6.08V~6.32V Power (PD) 500 MW Total resistance (ZZT) 50 ohms
2024-12-30 23

SZ4515

2024-12-30 23

BZT52C4V7

Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 4.7V Reverse current (IR) 3ua at 2V Attribute parameter values Voltage regulation value (range) 4.4V~5V Power (PD) 500 MW Total resistance (ZZT) 80 ohms
2024-12-30 23

BZT52C7V5

Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 7.5V Reverse current (IR) at 5V 1ua Attribute parameter values Voltage regulation value (range) 7V~7.9V Power (PD) 500 MW Total resistance (ZZT) 15 ohms
2024-12-30 23

ZMM55C51

2024-12-30 23

BZT52C36

Product Catalog Independent configuration of diodes Voltage regulation value (rated value) 36V Reverse current (IR) 100nA@25.2V Attribute parameter values Voltage regulation value (range) 34V~38V Power (PD) 500 MW Total resistance (ZZT) 90 ohms
2024-12-30 23

BZT52C2V7

2024-12-30 23

BZX84C5V1

Independent configuration of diodes Voltage regulation value (rated value) 5.1V Reverse current (IR) 2UA at 2V Attribute parameter values Voltage regulation value (range) 4.85V~5.36V Power (PD) 300 MW Total resistance (ZZT) 60 ohms
2024-12-30 23

BZT52B7V5

Independent configuration of diodes Voltage regulation value (rated value) 7.5V Reverse current (IR) at 4 V 500N Attribute parameter values Voltage regulation value (range) 7.35V~7.65V Power (PD) 500 MW Total resistance (ZZT) 30 ohms
2024-12-30 23

MCR100-8G

Product Catalog: Controllable Silicon (SCR)/Modules SCR type unidirectional SCR Shutter voltage (VGT) 800 mV Maintain current (IH) at 4 mA Peak disconnect voltage (VDRM) 800 V Shutter current (IGT) 200UA Attribute parameter values Turn on peak voltage (VTM) 1.5 V Starting current（ Itsm@f ）At 8a, 50 Hz Average Scattering Shutter Power (PG (AV)) 100 MW Root mean square current (IT (RMS)) at startup 800 mA Working temperature -40 ℃~125 ℃.
2024-12-30 23

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