Reverse Disconnect Voltage (VRMM): 5V Maximum clamping voltage: 9.2V Maximum Pulse Current (IPP): 21.7A Breakdown voltage: 6.4V Packaging: SOD-123

Diode configuration: independent Direct voltage drop (VF): 1.25V@150mA Reverse DC withstand voltage (V): 75V Rectifier current: 200 mA Reverse current (LR): 1ua at 75V Recovery time (TRR): 6 seconds Working temperature: -55 ° C~150 ° C @ (TJ) Packaging: SOD-123

Direct voltage drop (VF): 1.1V@1A Reverse DC withstand voltage (VR): 1kV Current of rectifier: 1A Reverse current (IR): 5UA at 1kV Packaging: SOD-123

Independent configuration of diodes Voltage regulation value (rated value) 100 V Reverse current (IR) 1ua at 76V Voltage regulation value (range) 95 V~105 V Power (PD) 3W Total resistance (ZZT) 250 ohms Packaging: SMB (DO-214AA)

Direct voltage drop (VF) of 550 MV at 3A Reverse DC withstand voltage (VR) 40 V Rectifier current 3A Reverse current (IR) at 40 V 500UA Packaging: SMA (DO-214AC)

Transistor type: NPN Collector current (IC): 500 mA Collector breakdown voltage (VCEO): 25V Power: 300 MW Packaging: SOT-23

Diode configuration: independent Rectifier current (IO): 19A Direct voltage drop (VF): 1.4V@5A Reverse DC withstand voltage (VR): 1.2kV Packaging: TO-220-2

Type 1 P channel Leakage source voltage (VDSS) 20V Runoff DC current (ID) 3A Connect resistor (RDS (ON) @ VGS, ID) 142m Ω @ 2.5V Packaging: SOT-23

Direct voltage drop (VF): 1.1V@2A Reverse DC withstand voltage (VR): 1kV Current of rectifier: 2A Reverse current (IR): 10mA Packaging: ABS

Output Signal Type: Fixed Operating Voltage: 30V Output voltage: 5 V Output current: 100 mA Packaging: SOT-89-3

Independent configuration of diodes Direct voltage drop (VF) 1.18V@2A Reverse DC withstand voltage (VR) 1kV 2A current rectifier Reverse current (IR) 5ua at 1000 V

Independent configuration of diodes Direct voltage drop (VF) 1.25V@150mA Reverse DC withstand voltage (VR) 75V rectification Reverse current (IR) 1ua at 75V Recovery time (TRR) 8ns Working temperature -55 ℃~150 ℃ (TJ)