semiconductor Oxide Field effect Transistor (MOSFET)

FS8205A

Type 2 N channel

Leakage source voltage (VDSS) 20V

DC discharge current (ID) 6A

Connect resistor (RDS (ON) @ VGS, ID) 18m Ω @ 4.5v, 6a

Power 1.5 W

Threshold voltage (VGS (TH) @ ID) 1.2V@250uA

Electric charge( Qg@Vgs ) 11nC@4.5V

Input capacitor( Ciss@Vds )800 pF at 8V

Reverse transmission capacitor( Crss@Vds (125 pF at 8 V)

Working temperature -55 ℃~150 ℃ (TJ)
Сопутствующие товары



Домой

телефон

адрес

到底了~