semiconductor Oxide Field effect Transistor (MOSFET)

2N7002KD

Type 2 N channel

Leakage source voltage (VDSS) 60 V

DC discharge current (ID) 340 mA

Working resistance (RDS (ON) @ VGS, ID) 900 MW, 10V, 500 mA

Power of 150 MW

(HCV(m)@ID) 2.5V@250uA

( kg@HCV ) -

( CISS@VDS ) with 40pf@10V

( Crss@Vds ) 10 PF@10 V
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