semiconductor Oxide Field effect Transistor (MOSFET)

AO3400A

Type 1 N channel

Leakage source voltage (VDSS) 30 V

DC discharge current (ID) 5.8A

Connect resistor (RDS (ON) @ VGS, ID) 52m Ω @ 2.5V, 4A

Power 1.2 W

Threshold voltage at 250UA (VGS (TH) @ ID) 700 mV

Electric charge( Qg@Vgs (17.5nm)

Input capacitor( Ciss@Vds (630pf at 15V)

Reverse transmission capacitor( Crss@Vds 70 pF at 15 V

Working temperature -55 ℃~150 ℃.
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