semiconductor Oxide Field effect Transistor (MOSFET)

SI2301CDS

Type 1 P-channel

Drain-source voltage (Vdss) 20V

Continuous drain current (Id) 3A

On-resistance (RDS(on)@Vgs, Id) 142mΩ@2.5V

Power 400mW

Threshold voltage(Vgs(th)@Id) 400mV@250uA

Gate charge (Qg@Vgs) 6.6nC@4.5V

Input capacitor (Ciss@Vds) 500pF

Reverse transmission capacitor (Crss@Vds) 80pF

Working temperature -55℃~+150℃
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