semiconductor Oxide Field effect Transistor (MOSFET)

FDN337N

Type 1 N channel

Leakage source voltage (VDSS) 30 V

DC discharge current (ID) 2.2a

Connect resistor (RDS (ON) @ VGS, ID) 65m Ω @ 4.5V, 2.2A

Power 500 MW

Threshold voltage (VGS (TH) @ ID) 1.3V@250uA

Electric charge( Qg@Vgs )9NC,10V

Input capacitor( Ciss@Vds 300 pF at 10 V

Reverse transmission capacitor( Crss@Vds 35 pF at 10 V

Working temperature -55 ℃~150 ℃ (TJ)
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